%0 Journal Article
%T SEVERAL PROPERTIES OF Ti IN SILICON<br>硅中钛的若干物理性质
%A Zeng Shurong
%A Lu Yongling
%A Fu Chunyin
%A <br>曾树荣
%A 鲁永令
%A 傅春寅
%J 电子与信息学报
%D 1987
%I 
%X Some results in investigating deep levels in Ti-doped silicon are given. Three Ti associated deep levels are found by DLTS. They are two electron trap levels located at Ec- 0.23 eV and Ec - 0.53eV respectively in Ti-doped n-silicon and a hole trap level located at Ev +0.32eVin Ti-doped p-silicon. In order to study these levels further, the method of transient capacitance at constant temperature is used, and the thermal activation energy and capture cross-section in the range of experimental temperature and other related parameters are obtained. According to our experimental results, a brief discussion on the bonding feature of these levels and on their pinning to which band is given.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=7AF5B4D1ED54C875&yid=9C2DB0A0D5ABE6F8&vid=9CF7A0430CBB2DFD&iid=0B39A22176CE99FB&sid=EB552E4CFC85690B&eid=7CE3F1F20DE6B307&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=9