STUDY OF THE ANODIZATION OF Al FILM ON InP SUBSTRATE AND ITS PROPERTIES
InP上Al膜的阳极氧化及其特性研究

The anodization of Al film on InP substrate and the properties of anodic Al2O3/lnP have been investigated by AES, DLTS, I-V, C-V and ellipsometer. The results show that the anodic oxide Al2O3 has the permitivity of 11-12 and the resistivity of 1.3×1013 ohm-cm. Interface state density at Al2O3/InP is about 1011cm-2·eV-1. DLTS reveals that there is continuously-distributed interface electron traps at Al2O3/lnP interface. Anodic oxide Al2O3 exhibits good stability and electrical properties and could be used for passivation, diffusion mask and gate insulator etc.