%0 Journal Article
%T STUDY OF THE ANODIZATION OF Al FILM ON InP SUBSTRATE AND ITS PROPERTIES<br>InP上Al膜的阳极氧化及其特性研究
%A Guo Kangjin Du Gendi Wu Zheng
%A <br>郭康瑾
%A 杜根娣
%A 吴征
%J 电子与信息学报
%D 1991
%I 
%X The anodization of Al film on InP substrate and the properties of anodic Al2O3/lnP have been investigated by AES, DLTS, I-V, C-V and ellipsometer. The results show that the anodic oxide Al2O3 has the permitivity of 11-12 and the resistivity of 1.3×1013 ohm-cm. Interface state density at Al2O3/InP is about 1011cm-2·eV-1. DLTS reveals that there is continuously-distributed interface electron traps at Al2O3/lnP interface. Anodic oxide Al2O3 exhibits good stability and electrical properties and could be used for passivation, diffusion mask and gate insulator etc.
%K Semiconductor interface
%K Anodization
%K Dielectric thin film<br>半导体界面
%K 阳极氧化
%K 介质薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=061D405352153E1C&yid=116CB34717B0B183&vid=FC0714F8D2EB605D&iid=B31275AF3241DB2D&sid=FED67FBA0A707330&eid=7FAAB0292FA0D5D0&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=14