COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs
MOSFET中载流子能量输运计算机辅助分析

The two-dimensional numerical simulation of energy transport for MOS FETs is presented, in which the effect of generation, recombination and temperature gradiem of carriers on the characteristics of the devices are considered. An improved mobility model is also proposed. The numerical results of micrometer and submicrometer MOSFETs show that the present model fits esperiment very well.