%0 Journal Article
%T COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs<br>MOSFET中载流子能量输运计算机辅助分析
%A Zhang Yimen
%A Teng Jianxu
%A <br>张义门
%A 滕建旭
%J 电子与信息学报
%D 1991
%I 
%X The two-dimensional numerical simulation of energy transport for MOS FETs is presented, in which the effect of generation, recombination and temperature gradiem of carriers on the characteristics of the devices are considered. An improved mobility model is also proposed. The numerical results of micrometer and submicrometer MOSFETs show that the present model fits esperiment very well.
%K MOSFET
%K Energy transport
%K Mobility
%K Numerical Simulation
%K CAD<br>金属-氧化物-半导体场效应晶体管
%K 能量输运
%K 迁移率
%K 数值模拟
%K CAD
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=480B1C6E2F6590B6&yid=116CB34717B0B183&vid=FC0714F8D2EB605D&iid=94C357A881DFC066&sid=BE5DBC360CD4FFB9&eid=8CE1095CD639AEF4&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=10