THE STUDY OF LATTICE MATCH IN GaInAsP/InP HETEROJUNCTION LPE LAYERS
GaInAsP/InP异质结液相外延层晶格匹配的研究

The effects of the growth conditions of two-phase solution liquid phase epitaxy (LPE) (i.e. growth temperature, cooling rates and solution oomposition) on lattiee mismatch and bandgap wavelength in GaInAs/InP heterojunction LPE layers have been investigated by X-ray double-erystal diffractometry and double-beam spectrophotometer. The interface stress in the grown interface free of misfit dislocations and the lattiee mismatch at growth temperature have been calculated.