%0 Journal Article
%T THE STUDY OF LATTICE MATCH IN GaInAsP/InP HETEROJUNCTION LPE LAYERS<br>GaInAsP/InP异质结液相外延层晶格匹配的研究
%A Yang Yi
%A Wu Xiangsheng
%A Li Runshen
%A Tan Ruhuan
%A Li Yunping
%A Shui Hailong
%A <br>杨易
%A 邬祥生
%A 李润身
%A 谭儒环
%A 李允平
%A 水海龙
%J 电子与信息学报
%D 1985
%I 
%X The effects of the growth conditions of two-phase solution liquid phase epitaxy (LPE) (i.e. growth temperature, cooling rates and solution oomposition) on lattiee mismatch and bandgap wavelength in GaInAs/InP heterojunction LPE layers have been investigated by X-ray double-erystal diffractometry and double-beam spectrophotometer. The interface stress in the grown interface free of misfit dislocations and the lattiee mismatch at growth temperature have been calculated.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=62EC52D1357A7B14&yid=74E41645C164CD61&vid=DF92D298D3FF1E6E&iid=94C357A881DFC066&sid=396DD691E964F390&eid=8ACD9060100C26F1&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=13