SIMULATION AND DESIGN OF DOUBLE-GATED FIELD EMISSION ARRAYS
双栅极场发射阵列的特性模拟与设计

One of the crucial technologies for developing high resolution field emitter displays and vacuum microelectronic devices in microwave and millimeter-wave bands is the design and fabrication of field emitter arrays which can provide with focused electron beam. After having a brief discussion of two kinds of double-gated field emission arrays (DGFEA), the concentric focusing (in plane gates) and the aperture focusing (2-tier gates), presented in the paper are the design and simulation methods of the aperture focusing DGFEA, and simulation results about its emission characteristics and focusing performance. It is believed from the results that the DGFEA can produce a pretty parallel electron beam, its maximum emission current density may exceed 300 A/cm2, and it meets the major requirements for developing microwave and millimeter-wave devices, and other strong beam devices.