%0 Journal Article
%T SIMULATION AND DESIGN OF DOUBLE-GATED FIELD EMISSION ARRAYS<br>双栅极场发射阵列的特性模拟与设计
%A Zhuang Xuezeng
%A Xia Shanhong
%A Tao Xinxin
%A <br>庄学曾
%A 夏善红
%A 陶新昕
%J 电子与信息学报
%D 1998
%I 
%X One of the crucial technologies for developing high resolution field emitter displays and vacuum microelectronic devices in microwave and millimeter-wave bands is the design and fabrication of field emitter arrays which can provide with focused electron beam. After having a brief discussion of two kinds of double-gated field emission arrays (DGFEA), the concentric focusing (in plane gates) and the aperture focusing (2-tier gates), presented in the paper are the design and simulation methods of the aperture focusing DGFEA, and simulation results about its emission characteristics and focusing performance. It is believed from the results that the DGFEA can produce a pretty parallel electron beam, its maximum emission current density may exceed 300 A/cm2, and it meets the major requirements for developing microwave and millimeter-wave devices, and other strong beam devices.
%K Vacuum microelectronic devices
%K Double-gated field emission arrays(DGFEA)
%K Simulation computation
%K Microwave tubes
%K Millimeter-wave devices<br>真空微电子器件
%K 双栅极场发射阵列
%K 模拟计算
%K 微波器件
%K 毫米波器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=0426D7023D5641405E627CFF70BA1DE3&yid=8CAA3A429E3EA654&vid=A04140E723CB732E&iid=CA4FD0336C81A37A&sid=DDD31293A7C7D057&eid=EFD65B51496FB200&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=12