POLYMETHYLMETHACRYLATE LANGMUIR BLODGETT FILMS FOR HIGH RESOLUTION ELECTRON BEAM RESIST
聚甲基丙烯酸甲酯LB膜用作高分辨率电子束抗蚀层的研究

Ultra-thin (20-100nm) polymethylmethacrylate (PMMA) films prepared by Langmuir-Blodgett techniques have been explored as high resolution electron beam resists. A Hitachi S-450 scanning electron microscope (SEM) has been refitted for a high resolution electron beam exposure system. The lithographic properties and exposure conditions of LB PMMA films were investigated. 0.15um lines-and-spaces patterns were achieved by using the SEM as the exposure tool. The results demonstrate that the etch resistance of such films is sufficiently good to allow patterning of a 20-nm aluminum film suitable for mask fabrication.