%0 Journal Article
%T POLYMETHYLMETHACRYLATE LANGMUIR BLODGETT FILMS FOR HIGH RESOLUTION ELECTRON BEAM RESIST<br>聚甲基丙烯酸甲酯LB膜用作高分辨率电子束抗蚀层的研究
%A Lu Wu
%A Gu Ning
%A Wei Yu
%A Shen Haoying
%A Zhang Lan
%A <br>鲁武
%A 顾宁
%A 韦钰
%A 沈浩瀛
%A 张岚
%J 电子与信息学报
%D 1994
%I 
%X Ultra-thin (20-100nm) polymethylmethacrylate (PMMA) films prepared by Langmuir-Blodgett techniques have been explored as high resolution electron beam resists. A Hitachi S-450 scanning electron microscope (SEM) has been refitted for a high resolution electron beam exposure system. The lithographic properties and exposure conditions of LB PMMA films were investigated. 0.15um lines-and-spaces patterns were achieved by using the SEM as the exposure tool. The results demonstrate that the etch resistance of such films is sufficiently good to allow patterning of a 20-nm aluminum film suitable for mask fabrication.
%K Langmuir-Blodgett films
%K Electron beam lithography
%K Resists<br>LB膜
%K 电子束刻蚀
%K 抗蚀剂
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=CA2D1450D4278C1480CADDF18A32D527&yid=3EBE383EEA0A6494&vid=7801E6FC5AE9020C&iid=B31275AF3241DB2D&sid=7004BE6E41AAF52C&eid=BBA8B1249CDAA6CE&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=8