INVESTIGATION OF IRRADIATION DONOR IN NTD CZ SI
NTDCZSi中辐照施主的研究

The annealing behaviour and property of irradiation donor (ID) in NTDCZSi have been studied by using the Hall effect measurements and TEM. In addidon, the effects of a variety of neutron doses and impurity (oxygen and carbon) concentrations on the forma-tion of ID are discussed. The phenomenon of Donor plateau is discovered for the first time. The experimental results show that ID creates about a 20 meV donor level in the forbidden band, which originates from the interface states of precipitated Si/SiO2.