%0 Journal Article
%T INVESTIGATION OF IRRADIATION DONOR IN NTD CZ SI<br>NTDCZSi中辐照施主的研究
%A Ren Bingyan
%A Li Wei
%A <br>任丙彦
%A 李伟
%J 电子与信息学报
%D 1991
%I 
%X The annealing behaviour and property of irradiation donor (ID) in NTDCZSi have been studied by using the Hall effect measurements and TEM. In addidon, the effects of a variety of neutron doses and impurity (oxygen and carbon) concentrations on the forma-tion of ID are discussed. The phenomenon of Donor plateau is discovered for the first time. The experimental results show that ID creates about a 20 meV donor level in the forbidden band, which originates from the interface states of precipitated Si/SiO2.
%K NTD CZ Si
%K Irradiation donor
%K Donor plateau<br>中子辐照直拉硅
%K 辐照施主
%K 施主平台
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=05B44C0DAC03D4E0&yid=116CB34717B0B183&vid=FC0714F8D2EB605D&iid=38B194292C032A66&sid=2E01F39B6CBD53DE&eid=50EA2A80A7D254EF&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=6