INFLUENCE OF NITROGEN FLOW RATE ON FIELD ELECTRON EMISSON ON AMORPHOUS-CARBON
氮流量对非晶碳膜场致电子发射的影响

Using microwave plasma-assisted chemical vapor deposition system, the nitrogen dopeed amorphaus-carbon films are obtained on the deposited molybdenum films, which are deposited on ceramic (Al2O3). The scanning electron microscopy (SEM), optical microscopy, X-ray diffraction (XRD) and Raman spectrum are used to analyze the obtained. Experimental results show that, when increasing the nitrogen, the eaission current density increases and the turn-on field decreases.