%0 Journal Article
%T INFLUENCE OF NITROGEN FLOW RATE ON FIELD ELECTRON EMISSON ON AMORPHOUS-CARBON<br>氮流量对非晶碳膜场致电子发射的影响
%A Wang Xiaoping
%A Li Yunjun
%A Yao Ning
%A Ma Huizhong
%A Bi Zhaoqi
%A Zhang Binglin
%A <br>王小平
%A 李运钧
%A 姚宁
%A 冯会中
%A 毕兆琪
%A 张兵临
%J 电子与信息学报
%D 2001
%I 
%X Using microwave plasma-assisted chemical vapor deposition system, the nitrogen dopeed amorphaus-carbon films are obtained on the deposited molybdenum films, which are deposited on ceramic (Al2O3). The scanning electron microscopy (SEM), optical microscopy, X-ray diffraction (XRD) and Raman spectrum are used to analyze the obtained. Experimental results show that, when increasing the nitrogen, the eaission current density increases and the turn-on field decreases.
%K Amorphous-carbon thin film
%K Field electron emission
%K Electron affinity<br>非晶碳膜
%K 场致电子发射
%K 电子亲和势
%K 氮流量
%K 平板显示
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=FF502F7090CAC008&yid=14E7EF987E4155E6&vid=EA389574707BDED3&iid=B31275AF3241DB2D&sid=6837BC93241057EF&eid=23F919F7BAF87909&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=5