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电子与信息学报 1988
HGIH-TEMPERATURE ANNEALING BEHAVIOUR OF NTD CZ Si IRRADIATED BY HIGH NEUTRON FLUENCE
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Abstract:
High temperature (750-1900C) annealing behaviour of NTD CZ Si irradiated by high neutron fluence (1018 n/cm) is investigated. It is found that neutron irradiation induced donor (NIID) with high concentration can be produced within the temperature range, die highest concentration of the donors can arrive in value about 10" cm-2. Only if annealing temperature exceeds 1100C, the accurate aim rwistivity can be obtained. The annealing technology for the NTD CZ Si and the condition of appearance and annihilation for NIID are studied.
