%0 Journal Article
%T HGIH-TEMPERATURE ANNEALING BEHAVIOUR OF NTD CZ Si IRRADIATED BY HIGH NEUTRON FLUENCE<br>大通量辐照的NTD CZ Si 高温退火行为
%A Zhang Weilian
%A <br>张维连
%J 电子与信息学报
%D 1988
%I 
%X High temperature (750-1900C) annealing behaviour of NTD CZ Si irradiated by high neutron fluence (1018 n/cm) is investigated. It is found that neutron irradiation induced donor (NIID) with high concentration can be produced within the temperature range, die highest concentration of the donors can arrive in value about 10" cm-2. Only if annealing temperature exceeds 1100C, the accurate aim rwistivity can be obtained. The annealing technology for the NTD CZ Si and the condition of appearance and annihilation for NIID are studied.
%K NTD CZ Si
%K Neutron irradiation induced donor
%K Annealing
%K Aim resistivity<br>中子嬗变掺杂直拉硅
%K 中照施主
%K 退火
%K 目标电阻率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=3FD288F0D1F8BA34&yid=0702FE8EC3581E51&vid=F3090AE9B60B7ED1&iid=94C357A881DFC066&sid=FE6B7E9BDCCDBAA6&eid=03436AC72A659ACA&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=8