RESEARCH ON REDUCING THE SELF-DOPING DURING SILICON CVD EPITAXY
硅CVD外延自掺杂效应的分析研究

This paper, first, analyzes self-doping mechanism, then develops an optimization technology by using the contrary compensation principle, adsorption-desorption mechanism and transform of viscous flow layer between static and dymanic conditons. It results in controlling efffectively self-doping under normal condition.