%0 Journal Article
%T RESEARCH ON REDUCING THE SELF-DOPING DURING SILICON CVD EPITAXY<br>硅CVD外延自掺杂效应的分析研究
%A Liu Yuling
%A Jin Jie
%A Xu Xiaohui
%A Zhang Dechen
%A <br>刘玉岭
%A 金杰
%A 徐晓辉
%A 张德臣
%J 电子与信息学报
%D 1996
%I 
%X This paper, first, analyzes self-doping mechanism, then develops an optimization technology by using the contrary compensation principle, adsorption-desorption mechanism and transform of viscous flow layer between static and dymanic conditons. It results in controlling efffectively self-doping under normal condition.
%K Silicon
%K Contrary compensation
%K CVD
%K Epitaxy
%K Self-doping<br>硅
%K 反向补偿
%K CVD
%K 外延
%K 自掺杂
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=5DDB28CEF409F322362D77087198F2F6&yid=8A15F8B0AA0E5323&vid=13553B2D12F347E8&iid=38B194292C032A66&sid=2E01F39B6CBD53DE&eid=50EA2A80A7D254EF&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=8