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电子与信息学报 1984
MEASUREMENT OF DIFFUSION LENGTH OF HOLES IN a-Si:H
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Abstract:
The results of a study in the diffusion length of holes in a-Si:H by measuring the sur-face photovoltage of the metal (Ni) Schottky barrier is reported. The change of field-assis-ted hole transport with bias light was observed. It is believed that measurement of diffusion length by this method may become a useful way of detecting and improving the quality of a-Si:H.
