%0 Journal Article
%T MEASUREMENT OF DIFFUSION LENGTH OF HOLES IN a-Si:H<br>非晶硅少子扩散长度的测量
%A Xu Le Liu Qiyi
%A <br>徐乐
%A 刘启一
%J 电子与信息学报
%D 1984
%I 
%X The results of a study in the diffusion length of holes in a-Si:H by measuring the sur-face photovoltage of the metal (Ni) Schottky barrier is reported. The change of field-assis-ted hole transport with bias light was observed. It is believed that measurement of diffusion length by this method may become a useful way of detecting and improving the quality of a-Si:H.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=7A4B1D86356477E0&yid=36250D1D6BDC99BD&vid=B31275AF3241DB2D&iid=38B194292C032A66&sid=002786F01A86D891&eid=D537C66B6404FE57&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=7