NUMERICAL SIMULATION OF LOW-TEMPERATURE BIPOLAR TRANSISTOR
硅低温双极晶体管的数值模拟

Numerical models for the physical parameters and physical effects about numerical simulation of low-temperature bipolar transistor are discussed. The numerical approaches required for simulation of low-temperature behavior are presented. A simulation program has been given to investigate bipolar transistor behavior range of 77-300K. Finally, the characteristics of a typical bipolar transistor are simulated at 300K and 77K.