%0 Journal Article
%T NUMERICAL SIMULATION OF LOW-TEMPERATURE BIPOLAR TRANSISTOR<br>硅低温双极晶体管的数值模拟
%A Zhang Zhubing
%A Wu Jin
%A Wei Tongli
%A <br>张住兵
%A 吴金
%A 魏同立
%J 电子与信息学报
%D 1998
%I 
%X Numerical models for the physical parameters and physical effects about numerical simulation of low-temperature bipolar transistor are discussed. The numerical approaches required for simulation of low-temperature behavior are presented. A simulation program has been given to investigate bipolar transistor behavior range of 77-300K. Finally, the characteristics of a typical bipolar transistor are simulated at 300K and 77K.
%K Bipolar transistor
%K Device simulation
%K Low temperature<br>双极晶体管
%K 器件模拟
%K 低温
%K 优化设计
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=7BFE80FC9812A4EE1C237893D602DD6C&yid=8CAA3A429E3EA654&vid=A04140E723CB732E&iid=E158A972A605785F&sid=DEBDB7F30FBA7F9B&eid=4AB4178709047BE3&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=8