EXPERIMENT ANALYSIS AND MECHANISM RESEARCH ON BREAKDOWN CHARACTERISTICS OF THIN SiO2 GATE DIELECTRIC
薄栅SiO2击穿特性的实验分析和机理研究

The roles of hot electrons and holes in dielectric breakdown of the thin gate oxide have been quantitatively investigated in the paper by separately controlling the amount of injected hot electrons and holes with Substrate Hot Holes(SHH) injection method. The results shows that the cooperation of hot electrons and holes is essential for the Time Dependent Dielectric Breakdown(TDDB) in thin gate oxides and thus a new physical model is presented.