%0 Journal Article
%T EXPERIMENT ANALYSIS AND MECHANISM RESEARCH ON BREAKDOWN CHARACTERISTICS OF THIN SiO2 GATE DIELECTRIC<br>薄栅SiO2击穿特性的实验分析和机理研究
%A Liu Hongxia
%A Hao Yue
%A <br>刘红侠
%A 郝跃
%J 电子与信息学报
%D 2001
%I 
%X The roles of hot electrons and holes in dielectric breakdown of the thin gate oxide have been quantitatively investigated in the paper by separately controlling the amount of injected hot electrons and holes with Substrate Hot Holes(SHH) injection method. The results shows that the cooperation of hot electrons and holes is essential for the Time Dependent Dielectric Breakdown(TDDB) in thin gate oxides and thus a new physical model is presented.
%K Thin gate oxide
%K Substrate hot holes
%K Time dependent dielectric breakdown
%K Breakdown mechanism<br>薄栅氧化层
%K 击穿机理
%K 二氧化硅
%K 半导体材料
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=44FEFA19D47A7886&yid=14E7EF987E4155E6&vid=EA389574707BDED3&iid=708DD6B15D2464E8&sid=C4B40BDE3E33484C&eid=B7C3373069B7AC9F&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=1&reference_num=7