THE CADMIUM INCOPORATION AND THE PREPARATION OF p-n JUNCTION MATERIALS IN Ga-AsCl3-H2 SYSTEM
砷化镓汽相外延中Cd的行为和p-n结材料的制备

The incoporation and the behavior of impurity Cd in VPE of GaAs were studiecl using elemental Cd as a dopant in Ga-AsCl3-H2 system. The distribution coefficient of Cd and its solubility in GaAs were found to be 0.01-0.001 and 4×1018 cm-3 respectively. The relationship between the electrical properties and epitaxial parameters has been discussed. As a result, the epilayers whh p-n or p+-p-n junction were prepared using elemental S and Cd doping techniques. The materials obtained in this way have a smooth surface morphology and a good interfacial properties.