%0 Journal Article
%T THE CADMIUM INCOPORATION AND THE PREPARATION OF p-n JUNCTION MATERIALS IN Ga-AsCl3-H2 SYSTEM<br>砷化镓汽相外延中Cd的行为和p-n结材料的制备
%A Peng Ruiwu
%A Xu Chenmei
%A Li Chuiyu
%A Wang Bohong
%A <br>彭瑞伍
%A 徐晨梅
%A 励翠云
%A 王博弘
%J 电子与信息学报
%D 1985
%I 
%X The incoporation and the behavior of impurity Cd in VPE of GaAs were studiecl using elemental Cd as a dopant in Ga-AsCl3-H2 system. The distribution coefficient of Cd and its solubility in GaAs were found to be 0.01-0.001 and 4×1018 cm-3 respectively. The relationship between the electrical properties and epitaxial parameters has been discussed. As a result, the epilayers whh p-n or p+-p-n junction were prepared using elemental S and Cd doping techniques. The materials obtained in this way have a smooth surface morphology and a good interfacial properties.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=1256A16903C0F2E1&yid=74E41645C164CD61&vid=DF92D298D3FF1E6E&iid=E158A972A605785F&sid=160561E9A96393DE&eid=3224764AEAFCF8C2&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=8