CONTROLLING METALLIC IMPURITY AND MICRODEFECT IN SILICON CVD EPITAXY LAYER USING CONTRARY COMPENSATION
利用反向补偿原理控制硅CVD外延层中的金属杂质和微缺陷

This paper analyzes the mechanism models of metallic impurity infection and adsorption-desorption, and the distribution law of microdefect in growing of silicon CVD epitaxy, and then a new epitaxy technology is proposed, which is optimized by using contrary compensation, and by which the metallic impurity and microdefect in silicon epitaxy layer are reduced effectively.