%0 Journal Article
%T CONTROLLING METALLIC IMPURITY AND MICRODEFECT IN SILICON CVD EPITAXY LAYER USING CONTRARY COMPENSATION<br>利用反向补偿原理控制硅CVD外延层中的金属杂质和微缺陷
%A Liu Yuling Wang Guizhen Xu Xiaohui Li Xiangdu Zhang Zhihua
%A <br>刘玉岭
%A 王桂珍
%A 徐晓辉
%A 李湘都
%A 张志花
%J 电子与信息学报
%D 1996
%I 
%X This paper analyzes the mechanism models of metallic impurity infection and adsorption-desorption, and the distribution law of microdefect in growing of silicon CVD epitaxy, and then a new epitaxy technology is proposed, which is optimized by using contrary compensation, and by which the metallic impurity and microdefect in silicon epitaxy layer are reduced effectively.
%K Silicon
%K CVD
%K Epitaxy
%K Metallic impurity
%K Microdefect
%K Contrary compensation<br>硅
%K CVD
%K 外延
%K 金属杂质
%K 微缺陷
%K 反向补偿
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=61F663AA94DDA8920515DAA0DBD2338F&yid=8A15F8B0AA0E5323&vid=13553B2D12F347E8&iid=CA4FD0336C81A37A&sid=91C9056D8E8856E0&eid=4BB057F167CF3A60&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=7