STUDY OF F -ISFET
氟离子敏感场效应晶体管的研究

The fluorine ion sensitive field-effect transistor (F-ISFET) is made by depositing very thin LaFs film on grid of field-effect transistor with sputter me-thod. The operating principle, measuring method and measured results of F--ISFET are given. The measured results show that this kind of sensor has higher sensitivity, shorter reponse time and better tinearity. On the basis of experemenral results, the factors influencing the steadiness and repeatablity of F--ISFET are conjecmred.