%0 Journal Article
%T STUDY OF F -ISFET<br>氟离子敏感场效应晶体管的研究
%A He Xingjun
%A <br>何杏君
%J 电子与信息学报
%D 1991
%I 
%X The fluorine ion sensitive field-effect transistor (F-ISFET) is made by depositing very thin LaFs film on grid of field-effect transistor with sputter me-thod. The operating principle, measuring method and measured results of F--ISFET are given. The measured results show that this kind of sensor has higher sensitivity, shorter reponse time and better tinearity. On the basis of experemenral results, the factors influencing the steadiness and repeatablity of F--ISFET are conjecmred.
%K Feild effect transistor (FET)
%K Fluorine ion sensitive-FET
%K Insulated gate-FET<br>场效应晶体管
%K 氟离子敏感场效应晶体管
%K 绝缘栅场效应晶体管
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=BD8672DC1B994CF9&yid=116CB34717B0B183&vid=FC0714F8D2EB605D&iid=E158A972A605785F&sid=78976D931AD1540F&eid=68FDAD96FCC0AB1B&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=5