THE INVESTIGATION OF MULTI-ENERGY IMPLANTATION
多能量离子注入的研究

In this paper, a new calculation method of multienergy implantation i.e., "eqivalent area method" has been proposed. According to the requirement for designing the specific device, a variety of concentration and implantation energy profile which can be arbitrarily supposed may be obtained by this method. Hence, it is possible to make the thin layer device which has a plane concentration profile.Using this method, the Si-EAPD device which has a rectangular on low-high-low concentration profile and the GaAs-MESFET or Si-IMPATT device which has a "horsehead" shape concentration profile have been designed and calculated. The calculated results are very satisfying. The prospect of the use of designing new-type device is predicted. The calculated results in this paper coicide with the experimental ones given by R.H.Benhard(1977).