%0 Journal Article
%T THE INVESTIGATION OF MULTI-ENERGY IMPLANTATION<br>多能量离子注入的研究
%A Wang Dening
%A Wang Weiyuan
%A <br>王德宁
%A 王渭源
%J 电子与信息学报
%D 1986
%I 
%X In this paper, a new calculation method of multienergy implantation i.e., "eqivalent area method" has been proposed. According to the requirement for designing the specific device, a variety of concentration and implantation energy profile which can be arbitrarily supposed may be obtained by this method. Hence, it is possible to make the thin layer device which has a plane concentration profile.Using this method, the Si-EAPD device which has a rectangular on low-high-low concentration profile and the GaAs-MESFET or Si-IMPATT device which has a "horsehead" shape concentration profile have been designed and calculated. The calculated results are very satisfying. The prospect of the use of designing new-type device is predicted. The calculated results in this paper coicide with the experimental ones given by R.H.Benhard(1977).
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=F8C5811F4EFEEBD0&yid=4E65715CCF57055A&vid=5D311CA918CA9A03&iid=38B194292C032A66&sid=02DC3A182A5530DF&eid=3D9746C06EC12B45&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=8