A NEW TECHNIQUE FOR THINNING THE THICKNESS OF UNUNIFORM EPILAYERS--SELECTIVE ANODIC OXIDATION
一种新的非均匀减薄法——选择阳极氧化法

A new technique called selective anodic oxidation, by which the ununiform epilayers can be thinned, is presented. The thickness of n+-layers of GaAs IMPATT diodes with n+-n-n++ structure has been strictly controlled by the use of this technique. This results in the efficiency of IMPATT diodes up to its theoretical value.