INVESTIGATION OF CHARGE INTENSIFICATION EFFECT IN a-Si:H BY MEANS OF PHOTOELECTRIC SENSITIVITY METHOD
用光电灵敏度法研究a-Si:H中的电荷放大效应

The photocurrent-voltage characteristics and photoelectric sensitivity of a-Si:H samples with slit and comb electrodes are measured. A method for calculating the charge intensifying gain from the photoelectric sensitivity is proposed. The obtained charge intensifying gain of a-Si:H under an electric field of 105 V/cm with this method is as high as 4.3×103. The generation process of the charge intensification effect in a-Si:H is discussed on the basis of the energy level diagram. And the product of electron ...