%0 Journal Article
%T INVESTIGATION OF CHARGE INTENSIFICATION EFFECT IN a-Si:H BY MEANS OF PHOTOELECTRIC SENSITIVITY METHOD<br>用光电灵敏度法研究a-Si:H中的电荷放大效应
%A Hai Yuhan
%A Hai Hao
%A Xi Zhonghe
%A Zhang Qiang
%A <br>海宇涵
%A 海灏
%A 奚中和
%A 张蔷
%J 电子与信息学报
%D 1999
%I 
%X The photocurrent-voltage characteristics and photoelectric sensitivity of a-Si:H samples with slit and comb electrodes are measured. A method for calculating the charge intensifying gain from the photoelectric sensitivity is proposed. The obtained charge intensifying gain of a-Si:H under an electric field of 105 V/cm with this method is as high as 4.3×103. The generation process of the charge intensification effect in a-Si:H is discussed on the basis of the energy level diagram. And the product of electron ...
%K a-Si:H
%K Semiconductor
%K Charge intensification effect
%K Photoelectric sensitivity method<br>非晶硅
%K 电荷放大效应
%K 光电灵敏度法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=7B3324154ABD48AD57F55FFF8E506552&yid=B914830F5B1D1078&vid=659D3B06EBF534A7&iid=94C357A881DFC066&sid=710C005323C0774A&eid=09F7C8D609E885AE&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=18