FEMTOSECOND HEAVY-HOLE DYNAMICS IN n DOPED GaAs
n型掺杂GaAs中重空穴的飞秒动力学

Ultrafast heavy hole relaxation in Si doped GaAs is studied using femtosecond absorption saturation measurements with an exciting photon energy of 1.52eV to produce electron states in the vicinity of the doped electron Fermi edge at room temperature.A heavy hole thermalization time of about 300fs is measured and is attributed to the heavy hole optical phonon scattering.An optical deformation potential of d 0(31eV) is estimated,which may reflects the influences of dopants on the HH nonpolar optical phonon interaction.