%0 Journal Article
%T FEMTOSECOND HEAVY-HOLE DYNAMICS IN n DOPED GaAs<br>n型掺杂GaAs中重空穴的飞秒动力学
%A Huang Chun
%A Zhang Haichao
%A Wen Jinhui
%A Guo Bing
%A Lai Tianshu
%A Lin Weizhu
%A <br>黄淳
%A 张海潮
%A 文锦辉
%A 郭冰
%A 赖天树
%A 林位株
%J 光子学报
%D 1999
%I 
%X Ultrafast heavy hole relaxation in Si doped GaAs is studied using femtosecond absorption saturation measurements with an exciting photon energy of 1.52eV to produce electron states in the vicinity of the doped electron Fermi edge at room temperature.A heavy hole thermalization time of about 300fs is measured and is attributed to the heavy hole optical phonon scattering.An optical deformation potential of d 0(31eV) is estimated,which may reflects the influences of dopants on the HH nonpolar optical phonon interaction.
%K n doped
%K GaAs
%K Heavy
%K hole relaxation
%K Femtosecond laser spectroscopy<br>n型掺杂GaAs
%K 重空穴的弛豫特性
%K 飞秒激光光谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=A0C69A4B95B992E37E978C88B85B5FB7&yid=B914830F5B1D1078&vid=D3E34374A0D77D7F&iid=94C357A881DFC066&sid=21D8CE17EE5EE354&eid=8ACD9060100C26F1&journal_id=1004-4213&journal_name=光子学报&referenced_num=1&reference_num=2