InGaAs MSM PHOTODETECTORS WITH InP:Fe BARRIER ENHANCEMENT LAYER
掺铁InP肖特基势垒增强InGAsMSM光电探测器

The InGaAs MSM photodetectors with InP:Fe barrier enhancement layer have beenfabricated by using LP-MOVPE growth and normal device processing. The detectors show breakdownvoltage greater than 10V and dark current about 170nA at 2V bias(3mA/cm2).The rise time of 21psand FWHM of 75ps have been measured by using a self built transient measurement system.