%0 Journal Article
%T InGaAs MSM PHOTODETECTORS WITH InP:Fe BARRIER ENHANCEMENT LAYER<br>掺铁InP肖特基势垒增强InGAsMSM光电探测器
%A Zhang Yonggang
%A Shan Hongkun
%A Zhou Ping
%A Fu Xiaomei
%A Pan Huizhen
%A <br>张永刚
%A 单宏坤
%J 光子学报
%D 1995
%I 
%X The InGaAs MSM photodetectors with InP:Fe barrier enhancement layer have beenfabricated by using LP-MOVPE growth and normal device processing. The detectors show breakdownvoltage greater than 10V and dark current about 170nA at 2V bias(3mA/cm2).The rise time of 21psand FWHM of 75ps have been measured by using a self built transient measurement system.
%K Photodetectors
%K OEIC
%K MOVPE<br>光电探测器
%K 光电集成
%K 金属有机物
%K 肖特基势垒
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=606EF1090EDEA05521389027D523BAA1&yid=BBCD5003575B2B5F&vid=B91E8C6D6FE990DB&iid=38B194292C032A66&sid=E089FDF3CDAE8561&eid=4966445AEEBA9556&journal_id=1004-4213&journal_name=光子学报&referenced_num=0&reference_num=4