SENSITIVE PHOTOTHERMAL DISPLACEMENT SPECTROSCOPY FOR GaTe PROPERTIES MEASURING
光热位移光谱技术在GaTe特征参量测量中的应用

In this paper, the photothermal displacement spectroscopy and the photothermaldisplacement response of Ga Te as a function of frequency is presented, and the anomalies in thisbehaviour are interpreted in terms of free carrier lifetime and diffusion effects.