%0 Journal Article
%T SENSITIVE PHOTOTHERMAL DISPLACEMENT SPECTROSCOPY FOR GaTe PROPERTIES MEASURING<br>光热位移光谱技术在GaTe特征参量测量中的应用
%A Zhang Zhenjie
%A <br>张振杰
%J 光子学报
%D 1997
%I 
%X In this paper, the photothermal displacement spectroscopy and the photothermaldisplacement response of Ga Te as a function of frequency is presented, and the anomalies in thisbehaviour are interpreted in terms of free carrier lifetime and diffusion effects.
%K Thermal diffusion
%K Photothermal displacement spectroscopy
%K Carrier lifetime
%K Band-gap<br>热扩散长度
%K 光热位移光谱
%K 带隙
%K 碲化镓
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=5FE6312AE20DFA61F4055B9FAB060F91&yid=5370399DC954B911&vid=96C778EE049EE47D&iid=CA4FD0336C81A37A&sid=286FB2D22CF8D013&eid=E514EE58E0E50ECF&journal_id=1004-4213&journal_name=光子学报&referenced_num=1&reference_num=1