A GENERALIZED FRENKEL-KONTOROVA MODEL OF THE Ga/Si(112) DIMERIZED OVERLAYER SYSTEM WITH VACANCIES

We develop a Frenkel-Kontorova model to analyze the microscopic origins of vacancy-line interactions in a pseudomorphic adsorbate system. The atomic positions in the ground states are obtained by use of the gradient method. Our numerical results can explain the 2×N reconstruction observed in Ga/Si(112).