%0 Journal Article
%T A GENERALIZED FRENKEL-KONTOROVA MODEL OF THE Ga/Si(112) DIMERIZED OVERLAYER SYSTEM WITH VACANCIES<br>
%A Xu Hai-bo
%A Wang Guang-rui
%A Chen Shi-gang
%A <br>
%J 中国物理 B
%D 2000
%I 
%X We develop a Frenkel-Kontorova model to analyze the microscopic origins of vacancy-line interactions in a pseudomorphic adsorbate system. The atomic positions in the ground states are obtained by use of the gradient method. Our numerical results can explain the 2×N reconstruction observed in Ga/Si(112).
%K Frenkel-Kontorova model
%K vacancy bond
%K gradient method<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=C670E00CA672281BD62DCBA9E76E0B98&yid=9806D0D4EAA9BED3&vid=9CF7A0430CBB2DFD&iid=5D311CA918CA9A03&sid=FED67FBA0A707330&eid=2C20277AC27E4821&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0