MOCVD GROWTH OF TRANSMISSION MODE NEA GaAs PHOTOCATHODE MATERIAL
透射式GaAs光电阴极材料的MOCVD生长

A transmission mode GaAs photocathode material has been grown by an CVD system. The doping concentration and the minority carrier diffusion length of P-GaAs emission layer are 1018 - 1019cm-3 and 4. 02 nm, respectively. The A1 content of AlGaAs is up to 0.83. The long wave limit of its absorption band coincides with design demands essentially. The activation experiments of the material have been carried out and finally the transmission mode NEA GaAs photocathode has been developed.