%0 Journal Article
%T MOCVD GROWTH OF TRANSMISSION MODE NEA GaAs PHOTOCATHODE MATERIAL<br>透射式GaAs光电阴极材料的MOCVD生长
%A Gao Hongkai
%A Zhang Jikang
%A Yun Feng
%A Gong Ping
%A Wang Haibin
%A Hou XunXian Institute of Optics
%A Precision Mechanics Academia Sinica
%A Xian
%A <br>高鸿楷
%A 张济康
%J 光子学报
%D 1992
%I 
%X A transmission mode GaAs photocathode material has been grown by an CVD system. The doping concentration and the minority carrier diffusion length of P-GaAs emission layer are 1018 - 1019cm-3 and 4. 02 nm, respectively. The A1 content of AlGaAs is up to 0.83. The long wave limit of its absorption band coincides with design demands essentially. The activation experiments of the material have been carried out and finally the transmission mode NEA GaAs photocathode has been developed.
%K MOCVD
%K GaAs
%K Photocathode<br>GaAs
%K 半导体
%K 光阴极
%K 气相沉积
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=C91A1D2E4D34F6E8DD3E3A7FC33051B6&yid=F53A2717BDB04D52&vid=659D3B06EBF534A7&iid=0B39A22176CE99FB&sid=76B5E24D6EC46B4B&eid=205BE674D84A456D&journal_id=1004-4213&journal_name=光子学报&referenced_num=0&reference_num=3