|
材料研究学报 1998
THE STRUCTURE AND PROPERTIES OF AMORPHOUS Ge/SiO_2 SUPERLATTICES
|
Abstract:
The amorphous Ge/SiO2 superlattices have been prepared by rf sputtering with poIycrystalline Ge and quata targets in Ar ambient. Small angle X-ray diffraction measurement was carried to invedigate the structure of the samples, the results indicate the abrupt intedece and highly homogeneous layered structure of the superlattices. The optical band-gap of the superlattices were determined by infrared transmission and reflection spectra, the blue shift of about 0.3eV of optical band-gap was found when the width of Ge potential well decrease from 0.38nm to 0.12nm.