DEPOSITION DIAMOND FILM BY HFCVD WITH SEPARATE INLET OF CH_4 AND H_2
分离送入甲烷和氢气的热丝法沉积金刚石膜

HFCVD metliod was employed to deposit diamond film on silicon substrate. The design of in-letting H2 and CH4 separetely was applied, which made the resistanee of tungsten filament dccrease to 20%,compared to that of HFCVD with mixture inletting. Moreover, well-faccted crystal of diamond could be got. The experiment showed that the nux of reaction gas influnced strongly on dense growth zone of dia-mond film.