%0 Journal Article
%T DEPOSITION DIAMOND FILM BY HFCVD WITH SEPARATE INLET OF CH_4 AND H_2<br>分离送入甲烷和氢气的热丝法沉积金刚石膜
%A CHEN Guangchao
%A HUANG Rongfang
%A WEN Lishi
%A <br>陈广超
%A 黄荣芳
%A 闻立时
%J 材料研究学报
%D 1997
%I 
%X HFCVD metliod was employed to deposit diamond film on silicon substrate. The design of in-letting H2 and CH4 separetely was applied, which made the resistanee of tungsten filament dccrease to 20%,compared to that of HFCVD with mixture inletting. Moreover, well-faccted crystal of diamond could be got. The experiment showed that the nux of reaction gas influnced strongly on dense growth zone of dia-mond film.
%K HFCVD inlet resistance crystal zone<br>热丝法
%K 晶形
%K 生长区
%K 金刚石
%K 薄膜沉积
%K 甲烷
%K 氢
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=C101C4C04993B4D94FCD8446E6CBEB3B&aid=9DE03D751D89D89D&yid=5370399DC954B911&vid=708DD6B15D2464E8&iid=38B194292C032A66&sid=717CC18E05F2AFA0&eid=CF6CB42CFF3D4C4E&journal_id=1005-3093&journal_name=材料研究学报&referenced_num=4&reference_num=2