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材料研究学报 1998
DEPENDENCE OF STRUCTURE OF BURIED SiC LMERS ON C~+ IMPLANTATION DOSE
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Abstract:
Buried SiC layers of different implantation doses were formed by using a metal vapor vacuum arc (MEVVA) ion source, with C+ ions implanted into Si substrates. In the present study the beam energy was 50keV and the ion dose was varied from 3.0×1017cm-2 to
